Industrial Visit

1. Johnson & Johnson.
2. Nestle.
3. ArcelorMittal.
4. Maggie.

Date of Visit: 16/03/2019

Venue: IIT-Bombay, Powai.

Timing: 9am to 12pm

Objectives:

1. To see the nanofabrication setup.
2. To understand the fabrication processes for MEMS devices.
3. Practical explanation for theoretical concepts.
4. For better understanding of processes.

Organized by:

Samita Bhandari (Asst. Professor- Department of Electronics Engineering).

Persons Involved:

1. Abhijit Somnathe (HOD-Department of Electronics Engineering).
2. Madhuri Kadam (Asst. Professor- Department of Electronics and Telecommunication Engineering).
3. BE ETRX students .

Event Details:

A visit to IIT-Bombay Nanoelectronics department was organised by the faculty of Shree L. R. Tiwari College of Engineering for the students. IIT-Bombay has a set up for the nanofabrication processes for research purpose. And hence this visit was organised to have a brief idea about the theoretical concepts. Students were asked to report sharp at 9am at the main gate of IIT-Bombay. After completing the formalities, everyone reached the nanoelectronics building. There the students were divided into groups of 10. Each group was made to visit the various labs one by one accompanied by a research scholar there. Following topics were covered from the syllabus.

Deposition systems (CVD, ALD, PVD):

Molecular Beam Epitaxy:

MBE takes place in high vacuum or ultra-high vacuum (10-8 Pa). The most important aspect of MBE is slow deposition rate (typically less than 1000 nm per hour), which allows the films to grow epitaxially. The slow deposition rates require proportionally better vacuum to achieve the same impurity levels as other deposition techniques.

Furnaces for oxidation, diffusion and annealing (2-inch, 4 inch):

During semiconductor device fabrication, thin film growth and deposition steps typically occur more number of times than any other process. These are often critical processes that require careful thickness and quality control. For example, during silicon transistor fabrication, growth of thin film SiO₂ is generally required immediately after the RCA clean process. This oxide can be grown on the Si wafer surface using different process that define its growth rate and quality. Whatever is the chosen process, maintaining the tight control of the process conditions and minimizing contamination on the wafer surface during the growth process is critical for final device performance. Hence, separate process-based oxide growth furnaces are needed for the same.

Etch tools (STS RIE, Etch Centura and Edge Isolation tool):

While a lithography process is used to write micrometre/nanometre-sized patterns on a resist layer, a different technique is needed to transfer those patterns from the resist onto the main layer on the semiconductor wafer. Wet etching and dry etching are the most commonly used processes to achieve this goal. Dr. etch usually refers to material removal or patterning using a chemically reactive plasma. When a lithographic patterned sample is introduced into this plasma, ionic species bombard and chemically react with the exposed areas, while the resist patterned areas are left protected. This method is anisotropic whereas wet etch is isotropic in nature. As a result, this method is preferable.

Lithography Tools:

IITBNF has multiple optical lithography tools with different dimension limits. They also have a laser writer system that is capable of producing mask plates with micrometre sized (patterns for use in optical lithography tools. The best resolution at IITBNF (< 20nm) is achieved through the state-of-the-art e-beam lithography tool. This tool can also be used for silicon dioxide and metal deposition using its electron beam induced deposition (EBID) feature. For both optical and e-beam tools, resist spinners dedicated to different types of resists are available with capabilities to process 2”, 4” and 8” wafers. All lithography tools housed in separate clean rooms with tight control over temperature and lighting conditions.

Plasma Immersion Ion Implanter:

As CMOS device gate length has shrunk to 45nm, the short channel effects (SCE) becomes very severe. To reduce SCE, one of the solutions is to make very shallow S/D junctions. For the same, implant energy is less than 2keV is required, where commercial Ion Beam Implanters have several issues like beam current instabilities at low voltages. PIII is very suitable for ion energy even at 200V operation. This system uses BF₃ and PH₃ gases for Boron (p type) and Phosphorous (n type) implants in Si wafers.

Event Outcomes:

Students have understood the concepts better and have come to know about the actual practical set up of nanofabrication processes. A visual idea was obtained by this visit about the Clean Room and Si wafers.

Faculty In charge:

• Tanvi Thakur (Department of Electronics)
• Rohini Jadhav (Department of Electronics)

Objective of the visit:

The visit to Automation Expo 2018 aimed at acquainting the students of Electronics Engineering with different upcoming ideas and innovations, that can create revolutionary progress in this era of Technology. It is the largest Automation & Instrumentation exhibition. It is an ideal platform for the Indian and global automation industry to converge and exhibit the cutting-edge technologies, advancements, systems, and services. Moreover, to make the theoretical concepts more resolved for the students, this visit was organized by the college faculty. To get information about various manufacturing companies, their products and the technology involved in making was one of the objectives. An initiative by the professors of the department helped the students know more and more about the newness of technology, scope of the field and areas of better job opportunities.

Event Details:

This event took place at the Bombay Exhibition Centre, Goregaon (E), Mumbai. The event was scheduled from 29^th August, 2018 to 1^st September, 2018. Automation Expo, South East Asia’s biggest show, extends a platform to many leading industries and companies to showcase their products and evolving technologies that help them survive in the domestic and global markets and sustain a better position due to intensifying competition.

The students of SLRTCE walked in at 11 a.m. after the registrations being completed at the entrance. Then, they were free to explore the entire exhibition which was huge and phenomenal with over 250+ exhibitors. Students came to know more about the companies they had just heard of. Every second stall was an introduction to something new in the field of technology. Here is a list of few out of many companies:

• BHOLANATH PRECISION ENGINEERING PVT. LTD.: They are the only company in India that manufacture Motors. Their factory is at Shahpur, Thane while their office is located at Bhandup, Mumbai.
• UNIVERSAL ROBOTS.: They are involved in the manufacturing of 6 axes collaborative industrial robot (cobot) arm to mimic the range of motion of a human arm.
• ELECTRONIC SWITCHES: They specialise in big display indicators, digital counters, proximity switches, level sensors, etc. This company is based in Nashik.
• COMPUCARE: These are manufacturers and dealers of CCTVs, LED display board, production monitoring systems, safety solutions, etc. Their office is in Vadodara and their set up extends into cities like Ahmedabad, Surat, Mumbai, Bangalore.
• TAC AUTOMATION PVT. LTD.: They specialise in HMI, PLCs, Inverters, Servo Drives, etc. They are located in Delhi.
• TAMRON INDIA PVT. LTD.: This Industry is in Haryana. As per their tagline, they provide eyes for industries. In other words, they manufacture high quality Industrial Lenses.
• PCB POWER: It is an online PCB specialist company located in Gandhinagar, Gujrat. This company designs PCBs as per the requirement posted by the customer online on their website pcbpower.com. They do allow Industrial visits for college students.
• MENZEL VISION AND ROBOTICS PVT. LTD.: Based in Mumbai, they design Machine Vision products Apart from these companies, organizations like Nanjing Wotian Technology Co. Ltd. (China), Qinhuangdao Jialong Glass Co. Ltd.(China), Taiwan Association of Machinery Industry (Taiwan), Puls (Singapore) and other such organizations from neighbouring countries were also a part of this meet.

All the brands and companies present there were a step forward from each other and are dominating with their ideas globally. This show was also a platform to students from different colleges who could exhibit their final year projects to the visitors. Some companies are interested in providing internships and training to students for gaining practical experience and knowledge. They are listed as follows:

• Bholanath Precision Engineering Pvt.Ltd., Bhandup
• Dynalog (India) Limited., Mumbai.

Outcome of the Visit:

This visit has a given a brief idea to students about the pace at which the world around them is progressing. They are now well versed with this “hi-tech” era. Automation Expo 2017 has fetched information from all aspects of technology in bulk. Not only in technical terms but a clue about companies and set-ups involved in making our lives easier through their inventions, was known to them.

Objectives:

1. To observe nanofabrication setup.
2. To understand various fabrication processes for MEMS devices .
3. To give practical knowledge to students about processes which they have studied theoretically in classroom.

Persons involved:

1. Prof.SamitaBhandari.(Asst.Professor ETRX):
   Role – Organizer of the visit, planning ,taking permission from college&IITB, coordinating with students.
2. Prof.ManjiriGogate
3. Prof.PragatiDiwedi
4. Students of  final year ETRX.

Event Details:

Reached to the lab at 2pm.In three batches their volunteers explained all the departments one by one. Following points are covered from the syllabus.

Fabrication:

• Deposition systems (CVD,ALD,PVD)
  • http://www.cen.iitb.ac.in/slotbooking/SOP/166_SOP.pdf
  • http://www.cen.iitb.ac.in/slotbooking/GLIMPSE/166_GLIMPSE.pdf
  • http://www.cen.iitb.ac.in/slotbooking/SOP/199_SOP.pdf

• • Molecule Bam Epitaxy (GaAs/InGaAs)Molecular beam epitaxy takes place in high vacuum or ultra-high vacuum (10-8 Pa). The most important aspect of MBE is the slow deposition rate (typically less than 1000 nm per hour), which allows the &ilms to grow epitaxially. The slow deposition rates require proportionally better vacuum to achieve the same impurity levels as other deposition techniques.

• • Furnaces for oxidation ,diffusion and annealing(2 inch,4inch) During semiconductor device fabrication, thin film growth and deposition steps typically occur more number of times than any other process. These are often critical processes that require careful thickness and quality control. For example, during silicon (Si) transistor fabrication, growth of a thin film of silicon dioxide (SiO2) is generally required immediately after the RCA clean process. This oxide can be grown on the Si wafer surface using different processes that define its growth rate and quality. Whatever the chosen process, maintaining tight control of process conditions and minimizing contamination on the Si wafer surface during the growth process is critical for final device performance. Hence, separate process-based oxide growth furnaces are needed for the same.
  • Etch tools (STSRIE, EtchCentura & Edge isolation tool) While a lithography process is used to ‘write’ micrometer/nanometer-sized patterns on a resist layer, a different technique is needed to transfer these patterns from the resist onto the main layer on the semiconductor wafer. Wet etching & dry etching are the most commonly used processes to achieve this goal. Dry etch usually refers to material removal or patterning using a chemically reactive plasma. When a lithographically patterned sample is introduced into this plasma, ionic species bombard and chemically react with the exposed areas, while the resist-patterned areas are left protected. This method of pattern transfer from resist to the main layer using dry etch technique is anisotropic, whereas wet etch processes are typically isotropic in nature. As a result, dry etching is the preferred process for pattern transfer of small dimensions (≤ 10μm) and is often one of the critical steps in a semiconductor device fabrication run.

• Rapid thermal annealing.
• http://www.cen.iitb.ac.in/slotbooking/SOP/164_SOP.pdf

• Lithography tools.
  IITBNF has multiple optical lithography tools with different pattern dimension limits. We also have a laser writer system that is capable of producing mask plates with micrometre-sized patterns for use in the optical lithography tools. The best resolution at IITBNF (< 20 nm) is achieved through our state-of-the-art e-beam lithography tool: Raith 150 Two. This tool can also be used for in-situ silicon dioxide and metal deposition using its electron beam induced deposition (EBID) feature. For both optical & e-beam tools, resist spinners dedicated to different types of resists are available with capabilities to process 2”, 4” & 8” wafers. All lithography tools are housed in separate clean rooms with tight control over temperature, humidity & lighting conditions.

• • Plasma immersion ion implaner.

As CMOS device gate length has shrunk to 45nm, the short channel effects (SCE) become very severe. To reduce SCE one of the solution is to make very shallow S/D junctions. For the same, we require implant energy less than 2KeV, where commercial Ion Beam Implanters have several issues like beam current instabilities at low voltages. PIII is very suitable for ion energy even at 200V operation. This system uses BF3 and PH3 gasses for Boron (ptype) and Phosphorus (n-type) implants in Si wafers.

• Gas injection system.

Event outcomes

• Students come to know about actual practical set up of fabrication of nanodevices/ MEMS devices. They can visualize silicon wafers, cleanroom.

PR manager Ranjana Gupta given information about various training courses for students . For interested students we can give apportunity to student to do work with after some formalities.

Scope of  Improvement

• Simulation and characterization lab visit.
• Visit to nanosniff company IITB.